Abstract
The effect of treatments in plasmas of different gases and subsequent deposition of diamond-like carbon films (DCFs) on the transmission of semi-insulating GaAs crystals in the IR spectral range has been analyzed. It is shown that deposition of 1- to 1.5-μm DCFs makes it possible to increase the GaAs transmission in the range of 4–15 μm and that preliminary treatment in H+ or Ar+ plasma increases the optical transmission of the DCF-GaAs structure. A mechanism is proposed to explain the effect of plasma treatment on the optical transmission of semi-insulating GaAs in the IR spectral range.
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