Abstract
The analysis of SiGe heterostructures by SIMS using Cs ion bombardment provides information for all relevant species such as B, C, O, Si, P, As and Ge in a single profile. However, the B depth profile is distorted due to Cs-enhanced chemical segregation. If deconvolution is successfully applied to the B profile, the deconvolved B profiles are shown to be equivalent to those measured using an oxygen beam for Si, SiGe and Si/SiGe/Si samples.
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