Abstract
AbstractWe have developed a scanning deep level transient spectrometer (SDLTS), using the current‐detection principle. With this spectrometer it is possible to detect deep levels in the band gap with a spatial resolution of several μm. From electron‐beam‐induced DLTS spectra of plastically deformed n‐type silicon crystals, one can conclude that under the chosen experimental conditions only minority carrier traps contribute to the SDLTS signal.
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