Abstract
The thermal and the electrical behavior of interconnects for the 100 nm and the 50 nm technology node have been investigated with regard to the application of advanced dielectric materials. Their low thermal conductivity causes different design limitations for dc and ac carrying interconnects. The maximum possible current density of dc lines is determined by a self-consistent approach considering both Joule heating and electromigration (EM). The temperature of signal lines is related to the position-dependent current density. Temperature increase of less than 20 K is found near the front end of the interconnects. At high frequencies transient electrical behavior is strongly influenced by parasitic line capacitance and inductance. The effect on line temperature is simulated.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
