Abstract
We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments.
Highlights
The application of silicon technology to the development of low photon flux sensors—later known as silicon photomultipliers (SiPMs)—can be traced back to the late 1970s [1], when a space-distributed fine array of metal resistor semiconductor (MRS) micro-sensors was conceived with individual quenching and common output
On the one side it is needed to benchmark against the mature available SiPMs, which are not always developed in standard CMOS technology but in dedicated lines with additional optimized masks
This first comparison allows us to understand how far the standard CMOS process is used in this work from the behaviour of optimized processes for good-performing SiPM
Summary
The application of silicon technology to the development of low photon flux sensors—later known as silicon photomultipliers (SiPMs)—can be traced back to the late 1970s [1], when a space-distributed fine array of metal resistor semiconductor (MRS) micro-sensors was conceived with individual quenching and common output. The SiPM R&D is dominating the panorama of modern research in the field of low photon flux detectors, with the synergy and unique contribution of a large number of groups during the last 30 years [2,3,4,5,6,7,8,9,10]. The SiPM is equivalent to an array of SPAD-like microcells with passive quenching
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