Abstract

A novel silicon-containing polymer, SCMR (silylated clay minerals resist), has been developed for microlithography. SCMR was synthesized by reaction of the silicate sheet of chrysotile with dimethylvinylchlorosilane (DMVCS) and/or trimethylchlorosilane (TMCS). The structure of SCMR is estimated as a mixture of R1R2R3SiO, SiO3(OH), and SiO4 (R1, R2, R3: methyl or vinyl group). The silicon content of SCMR is 40–45 wt% and its O2-RIE resistance is 50 times as high as that of a novolak-based photoresist. SCMR has a high thermal stability and its profiles are not changed up to 300°C. SCMR is a negative working E-beam resist and has a high sensitivity, 2 µC/cm2, and a high resolution, 0.2-µm line and space. CMPR (clay minerals positive resist), consisting of SCMR and an acid generator, has been developed for a positive working E-beam resist. It has a high sensitivity, 0.2 µC/cm2.

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