Abstract
An organic light‐emitting diode was fabricated using cadmium selenide (CdSe)/poly(N‐vinylcarbazole) nanocomposite as the hole transport layer (HTL). The CdSe nanoparticles (NPs) with a mean crystallite size of 6.2 nm were prepared by high‐energy ball milling. Based on the current–voltage curves, the threshold voltage (V th) of the composite diode was found to be ~1.3 ± 0.1 V lower than that of the diode without CdSe, with a significant increase in the current density for the composite diode. Moreover, the electroluminescence (EL) properties (luminous flux, emittance, and intensity) of the diode were found to be enhanced by ~16% with respect to those of the diode without CdSe. The decrease of the threshold voltage and the increase of the current density and the EL were due to the CdSe NPs that operate as hole trap centers in the HTL.
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