Abstract
Micron and sub-micron gold lines have been produced by liftoff following e-beam and X-ray exposures of resist coated chromium layers on silicon. Etching a 0.1 micron chromium layer after development results in an undercut which aids the liftoff process. This approach has been used in e-beam lithography on PMMA (i.e. positive resist) to decouple the e-beam exposure from generation of the undercut. In this way 0.7 micron gold lines separated by less than 0.3 microns have been produced. A similar approach when used in X-ray lithography on OEBR (negative resist) yielded gold lines down to 0.3 microns in width and separation. Scanning electron micrographs of patterns at various stages of processing are presented and the profiles of the resist walls and the nature of the undercut are described.
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