Application of As-Deposited Poly-Crystalline Silicon Films to Low Temperature CMOS Thin Film Transistors

Abstract

As-deposited poly-crystalline silicon (poly-Si) films have been applied to low temperature processed complementary metal oxide semiconductor (CMOS) thin film transistors (TFTs). Continuous two-step deposition of poly-Si films in the infra-low pressure chemical vapor deposition (ILPCVD) reduces the silane partial pressure to 0.10 mTorr to obtain high quality films. The maximum processing temperature of 555° C through the CMOS TFT fabrication is during the poly-Si deposition. Since the as-deposited poly-Si films are good in quality, CMOS static shift registers have been successfully integrated on a glass substrate with the as-deposited poly-Si TFTs.