Abstract
Transparent Conductive Oxide (TCO) layers due to transparency, high conductivity and hole injection capability have attracted a lot of attention. One of these layers is Indium Tin Oxide (ITO). ITO due to low resistance, transparency in the visible spectrum and its proper work function is widely used in the manufacture of organic light emitting diodes and solar cells. One way for improving the ITO surface is plasma treatment. In this paper, changes in surface morphology, by applying argon atmospheric pressure cold plasma, was studied through Atomic Force Microscopic (AFM) image analysis and Fourier Transform Infrared Spectroscopy (FTIR) analysis. FTIR analysis showed functional groups were not added or removed, but chemical bond angle and bonds strength on the surface were changed and also AFM images showed that surface roughness was increased. These factors lead to the production of diodes with enhanced Ohmic contact and injection mechanism which are more appropriate in industrial applications.
Highlights
Transparent Conductive Oxide (TCO) due to transparency, high conductivity and hole injection capability have attracted a lot of attention in research and industry.[1]
Low pressure oxygen plasma and low pressure argon plasma are the most suitable plasma that lead to improvement in the efficiency of OLEDs which are produced in a vacuum chamber
The application of plasma on the surface, two types of chemical and physical changes take place. These changes were investigated by Fourier Transform Infrared Spectroscopy (FTIR) and Atomic Force Microscopic (AFM) analysis
Summary
TCOs due to transparency, high conductivity and hole injection capability have attracted a lot of attention in research and industry.[1]. The ITO work function varies from 4 eV to 5 eV This is important for improving hole injection.[5] Optimization of injection is important in reducing the barrier for hole injection into the Highest Occupied Molecular Orbitals (HOMO) of organic materials.[6] Change in behavior of the transparent conductive surface can lead to a reduction in the threshold voltage, improve performance and extend the life time of the devices to be made on these layers.[7] In this paper we want to apply atmospheric pressure cold plasma on ITO layer (by use of argon atmospheric pressure cold jet plasma device, “Figure 1”). The most comfortable and the most convenient method of producing a plasma is argon atmospheric pressure cold plasma, whose effect on ITO surface is as good as Low pressure O2 plasma and low pressure Ar plasma.[8,9,10,11]
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