Application of an electron-beam scattering parameter extraction method for proximity correction in direct-write electron-beam lithography

Abstract

Proximity correction schemes as used in electron beam lithography require the determination of electron scattering within the exposed resist and underlying substrate material. Scattering of an electron beam in a solid can be described by a double Gaussian function with coefficients (alpha) (forward scattering), (beta) (backward scattering), and (eta) E (ratio of energy deposition due to backscattering and forward scattering). These three coefficients are also referred to as 'proximity parameters.' This paper discussed proximity parameters mainly as a function of resist thickness. New experimental results are reported.