Abstract
Ultra-low power room temperature NO2 sensors are demonstrated using AlGaN/GaN. The chemically stable semiconductor was sensitized to increase the sensitivity to enable ultra-low power, low ppb level detection without additional heaters. Sensors were sensitized by two methods, ultra-thin ALD SnO2 and surface enhancement by ICP-RIE in BCl3 gas. Both sensitization techniques demonstrate room temperature response, while the unsensitized sensors did not respond. At room temperature, surface enhanced sensors show a significant increase in sensitivity compared to SnO2 sensitized sensors. Sensitized sensors have fast response times and ultra-low power consumption to enable wearable monitoring systems with high spatial resolution of NO2.
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