Abstract
We have attempted to improve the reliability of Al metallization system of Si-LSI, using Hf3Si2 silicide with the lowest contact resistivity. Al3Hf/Hf bilayered films were interposed as a diffusion barrier between Al and Si in order to realize both preservation of the Al overlayer and sufficiently low contact resistivity at the Si interface. We have investigated the interfacial solid-phase reaction of the Al/Al3Hf/Hf/Si contact system by means of X-ray diffraction, Auger electron spectroscopy and X-ray photoelectron spectroscopy analyses, and compared it with that of the Al/Hf/Si system. It is revealed that the Al/Al3Hf/Hf/Si system is satisfactorily stable up to 420°C at which the formation of the Hf3Si2 phase occurs at the Si interface.
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