Abstract
The dynamical theory of X-ray scattering of distorted crystals is applied to the case of silicon crystals in which boron has been diffused. Double spectrometer reflexion profiles can thus be theoretically computed. Agreement with the experimental profiles is good except that computed junction depths are higher than the values measured by metallographic methods. On the other hand, the present method leads to a reliable determination of the diffusion coefficient of boron in the case of relatively high concentrations.
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Schedule a callMore From: Acta Crystallographica Section A: Crystal Physics, Diffraction, Theoretical and General Crystallography
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