Application and Utilization of High-Aspect-Ratio Anti-reflective Si Nanostructure-Embedded Optical Sensor for IoT Applications

Abstract

An Optical PV sensor device is one of the significant contributors in the upcoming future because of its high demand as different IoT applications such as imaging sensors and sensors for measuring various physical and chemical quantities. Consequently, thin PV sensors will be the better option in the coming future due to their low material cost and flexible attributes. But in the thin silicon substrate, some quantity of photons may not be able to absorb due to less substrate thickness as compared to conventional 180 μc Si wafer. For improving the efficiency of a thin crystalline silicon solar PV sensor, a proficient anti-reflection approach must be incorporated. For this reason, in this chapter, we try to present a comparative photonics study between high and low aspect ratio silicon nanostructures on top of the surface of the thin silicon PV sensor to reduce its reflection loss and parallelly absorb more incident photons into the substrate. Therefore, by this work, we are trying to realize that high aspect ratio silicon nanostructures give us satisfactory outcomes in the whole visible light spectrum with minimum material consumption.