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Abstract
We present an original and reliable technique to elucidate the different contributions to the apparent base resistance (RB = RBx + XRBi) of double heterojunction bipolar transistors (HBTs) designed by Alcatel-Thales III–V Lab. The extrinsic base resistance (RBx) is quantified using small-signal measurements. The base-collector junction distribution factor (X) and the intrinsic base resistance (RBi) are extracted from high-frequency noise (HFN) measurements. This method was applied to three InP/InGaAs HBTs having different emitter surfaces (SE). The correct determination of RBx, X and RBi may be a useful tool for compact and/or linear electrical modelling and may give some guidelines to designers to improve operation frequencies. Moreover, this strategy can be applied to any layout and technological variation of HBT; it can be also applied to homojunction bipolar transistors. Our results show that HFN analysis should be included to fully characterize bipolar transistors.
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