Abstract
A method for measuring piezoresistance effects in semiconductors is described. The principal sources of error of the usual steady stress method, namely, drift of the temperature and the sample current, and semiconductor noise, are avoided by using a 29 cycle/second alternating stress. The method, because of high sensitivity, is particularly suitable for low resistivity material. It is, however, not applicable to materials with extremely high resistivity. The piezoresistance constants directly measured are adiabatic.
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