Abstract
Unusual properties of the diluted nitrides A IIIB V–N make them very attractive in the point of view of fundamental investigations and practical applications. This work presents the growth characteristics and properties of the undoped GaAs 1− x N x /GaAs heterostructures obtained by the atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). The properties of the heterostructures were examined using high-resolution X-ray diffraction (HRXRD), photoreflectance spectroscopy (PR), photoluminescence (PL), photovoltage spectroscopy (PVS) and mercury probe C– V set-up with an HP 4192A impedance analyser (5 Hz–13 MHz). The maximum nitrogen content in GaAs 1− x N x epilayers, determined from PR spectra, did not exceed 1.74%. The influence of the growth temperature ( T g) and the nitrogen source concentration in gas phase ( X g) on the properties of the GaAs 1− x N x /GaAs heterostructures is presented and discussed.
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