Abstract
GaAs 1− x Bi x alloy was grown by atmospheric-pressure metalorganic vapour-phase epitaxy using a horizontal reactor. GaAs 1− x Bi x epilayers were elaborated on exactly (1 0 0)-oriented p-GaAs substrates. Trimethyl-gallium, trimethyl bismuth (TMBi), and arsine were used as precursor sources at a growth temperature of 420 °C within a very narrow range of V/III ratios and molar flow rates of TMBi. The lattice mismatch between the layer and the substrate was examined by using high-resolution X-ray diffraction technique. The measurements were performed on (0 0 4) and (1 1 5) planes. The solid composition of GaBi content in the GaAs 1− x Bi x alloy reaches a maximum value of about 3.7%. In analyzing the surface morphology, scanning electron microscopy (SEM) and SEM-energy dispersive X-ray spectrometer were used to qualify films properties.
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