Abstract
In a horizontal Bridgman apparatus the authors have grown bulk GaAs1-xPx single crystals. A distribution coefficient of k=2.7 for phosphorus was determined with photoluminescence. The magnetic circular dichroism of the absorption and optical detection of the electron spin resonance were applied to investigate the defects. The first experimental evidence for a paramagnetic phosphorus antisite-related defect and for a hitherto unknown arsenic-related defect is presented. By a room-temperature electron irradiation the arsenic antisite-related defect AsGa-X1, is produced similarly as in LEC-grown GaAs, but its zero phonon line is shifted to higher energy by 5 meV for x approximately=0.01.
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