Abstract
The relationship between the concentration of antisite defects in narrow-gap semiconducting crystals of A V 2B VI 3 and the bond polarization are analyzed. A change in the bond polarization affects the energy of formation of antisite defects which results in a change in concentrations of antisite defects and free current carriers. These relationships are manifested on electrical and optical properties of Sb 2- x In x Te 3, Bi 2- x In x Te 3, Sb 2- x Tl x Te 3 and Bi 2Te 3- x S x crystals, where In × Sb, In × Bi, Tl × Sb and S × Te uncharged defects are formed, respectively. The application of the bond polarization principle leads to the preparation of a Bi 2Te 3-Bi 2Te 3- x S x p- n junction.
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