Abstract
Intrinsic defects in Bi2Te3 were analyzed using first-principles density functional theory calculations. The results demonstrated that antisite defects were dominant in both p- and n-type Bi2Te3. To investigate the characteristics of these defects, n-type Bi2(Te,Se)3 compounds were fabricated using powder prepared by high-energy ball milling and their electrical properties were examined. Electrical resistivity and the Seebeck coefficient increased with ball milling time. These changes in both properties were attributed to a reduction in the carrier concentration, which was supported by the Hall coefficient measurement. The antisite defects were found to be responsible for the changes in carrier concentration. Lattice parameter analysis supported the postulate that variations in the concentration of antisite defects were responsible for the changes in carrier concentration. These findings suggest that optimization of carrier concentration should be considered in the high-energy ball milling process, in which reductions in grain size are expected to improve thermoelectric properties.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
