Abstract
Minimization of reflection losses is extremely important for efficient silicon solar cells made either on mono crystalline (c-) or multi-crystalline (mc-) silicon (Si) substrates. A simple and fast etching process yet effective for nano-scale texturing of mc-Si surface using silver assisted wet chemical etching is reported. This results in very low reflecting (<3%) mc-Si surface in the broad (300–1100nm) spectral range in a short duration (∼30s) of etch time. The process is applied successfully to produce black mc-Si solar cell with n+–p–p+ structure wherein n+ emitter and p+ back surface field are made by phosphorus and aluminum diffusion respectively. A significant increase (∼20%) in the short circuit current is observed in the nano-textured mc-Si solar cell as compared to the control cell (processed in the same batch) without any deleterious effect on other performance parameters. The improved performance of the nano-textured cell is also confirmed by light beam induced current measurements. It is a “proof of concept” of a simple, fast and inexpensive etching process to realize anti-reflective surface on mc-Si with improved solar cell performance and have potential for industrial solar cell application.
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