Abstract
Si/PEDOT: PSS solar cell is an optional photovoltaic device owing to its promising high photovoltaic conversion efficiency (PCE) and economic manufacture process. In this work, dopamine@graphene was firstly introduced between the silicon substrate and PEDOT:PSS film for Si/PEDOT: PSS solar cell. The dopamine@graphene was proved to be effective in improving the PCE, and the influence of mechanical properties of dopamine@graphene on solar cell performance was revealed. When dopamine@graphene was incorporated into the cell preparation, the antireflection ability of the cell was enhanced within the wavelength range of 300~450 and 650~1100 nm. The enhanced antireflection ability would benefit amount of the photon-generated carriers. The electrochemical impedance spectra test revealed that the introduction of dopamine@graphene could facilitate the separation of carriers and improve the junction quality. Thus, the short-circuit current density and fill factor were both promoted, which led to the improved PCE. Meanwhile, the influence of graphene concentration on device performances was also investigated. The photovoltaic conversion efficiency would be promoted from 11.06% to 13.15% when dopamine@graphene solution with concentration 1.5 mg/mL was applied. The achievements of this study showed that the dopamine@graphene composites could be an useful materials for high-performance Si/PEDOT:PSS solar cells.
Highlights
Solar energy holds a great potential for compensating the energy shortage
Zhu et al [24] prepared a 35 nm layer with PEDOT:PSS (AL 4083) on Si substrate as an interface layer, and the cell performance was improved. These results indicated that introduction of interface layer for Si/PEDOT:PSS solar cell is a promising method for improving the photovoltaic conversion efficiency (PCE) of solar cell
When G was coated with DA, a wide peak at 1120 cm−1 were observed according to the FTIR spectra of DA@G3 powder
Summary
Solar energy holds a great potential for compensating the energy shortage. The interface contact between Si and PEDOT:PSS film, conductivity of PEDOT:PSS film, and reflectance property of the cell have essential influence on the further improvement of photovoltaic conversion efficiency (PCE) [2,3]. Much efforts for improving the PCE of solar cell have been performed [4,5,6,7]. Si/PEDOT:PSS solar cell have already exceeded 17% since it was born [8], and still exhibited great potential for further improvement [5,9,10]. For Si/PEDOT:PSS solar cell, the electron-hole pairs are generated in Si substrate, and PEDOT:PSS film is mainly responsible for blocking the electrons, transporting the hole to electrode, and acting
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