Abstract
A reference material has been produced which can be used for the calibration of surface and near-surface analytical methods like secondary ion mass spectrometry (SIMS), Auger electron spectrometry (AES), X-ray fluorescence analysis (XRF), particle induced X-ray emission (PIXE) and Rutherford backscattering spectrometry (RBS). 400 keV Sb ions with a nominal dose of 5×10 16 cm −2 were implanted into a high-purity silicon wafer. The areal density of the implanted Sb-layer was determined with instrumental neutron activation analysis (INAA) and with RBS. The isotopic ratio of Sb-121 and Sb-123 was determined with INAA. The depth profile of the implanted Sb was measured with RBS and a thorough check of the homogeneity of the implanted layer was also performed with RBS.
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