Abstract
Suppressing the open-circuit voltage deficit and residual stress caused by stubborn defects is crucial for achieving efficiency flexible Cu2ZnSn(S,Se)4 solar cell coexisting with bending stability. The strategy of sputtering Sb2Se3 layer in CZTS precursor followed by selenization is proposed to realize Sb doping in CZTSSe. Benefitting from the role of Sb doping in suppressing SnZn defects, improved mechanical flexibility with decreased porosity and released residual stress declining from −5.75 GPa to −3.45 GPa of CZTSSe absorber is achieved, which can effectively inhibit carrier recombination in CZTSSe/CdS heterojunctions during harsh bending environment. Consequently, an enhanced efficiency from 3.06 % to 4.63 % is achieved with the optimal Sb2Se3 thickness of 80 nm, which can retain 90 % of its initial efficiency after harsh bending. The inspiring results provide a new route to stress regulation for flexible copper-based thin film solar cells.
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