Abstract
Abstract We present a study of the GaAs Fuchs-Kliewer phonon intensity and of the elastic peak width in a high resolution electron energy loss spectroscopy experiment on the Sb/GaAs(110) system grown at room temperature. An appropriate model calculation is performed, by assuming the growth of a semiconducting or metallic antimony overlayer on GaAs. Comparison with the experimental data shed light on the crystallization process of Sb via metallic island formation into a semiconducting matrix.
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