Abstract

The adsorption of antimony on III-V(110) surfaces has been studied as a function of overlayer coverage and annealing temperature using high-resolution soft x-ray photoemission (SXPS). A detailed line shape analysis of the Sb4d core level emission revealed that the deposition of 3–5 monolayers at RT and subsequent annealing up to 620K, leads to Sb4d core level emission being well resolved into two chemically shifted components for Sb on GaAs, GaP, InAs and InP (110) surfaces indicating highly ordered monolayers. The well ordered epitaxial monolayers are ideal candidates for photoelectron diffraction studies. This method provides further information on their geometrical structure, since the precise nature of these monolayers is still under discussion. Therefore the overlayer emission lines were monitored as a function of polar angles and photon energy. The resulting diffraction patterns show strong and significant variations for all systems under study. The experimental results are compared to calculations within a multiple scattering cluster model for various adsorption geometries of the Sb ML within the ECLS model. Considering the Sb4d core level emission the two chemically shifted components, which have distinct diffraction patterns, allow a clear assignment to the two distinct adsorption sides to be made.

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