Antimonide-based DFB laser diodes in the 2-2.7 μm wavelength range

Abstract

This work focuses on the fabrication and characterisation of DFB laser diodes operating around 2.6-2.65 μm. The laser structure is realized with a 1 μm-thick active region based on two Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.57</sub> In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.43</sub> As <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.11</sub> Sb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.89</sub> 16 nm-thick compressively strained quantum wells embedded between a barrier and a waveguide made of Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.30</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.70</sub> As <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.03</sub> Sb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.97</sub> . The laser operate in the continuous-wave regime at room temperature with a threshold current of about 100 mA at 20°C and a characteristic temperature of 57 K. A single frequency emission is obtained between 2.6 μm and 2.65 μm with a side mode suppression ratio reaching 25 dB and a continuous tuning of 2 nm.