Abstract
Antiguided array lasers were fabricated in thin p-clad, InGaAs-GaAs single quantum-well material. The required lateral refractive index variation was achieved by precisely modulating the thickness of the GaAs cap layer using a novel pulsed anodization/etching technique. Edge-emitting arrays having 20 lasers on 7-μm centers with 5-μm-wide gain regions were characterized. At 1.2 times the pulsed current threshold (I/sub th/), the central lobe of the lateral far field of the arrays contained about 75% of the beam power and was about twice the diffraction limit (FWHM=0.8/spl deg/). At 10×I/sub th/, the central lobe contained about 60% of the beam power and was about 1.6/spl deg/ wide.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
