Antifuse OTP Cell in a Cross-Point Array by Advanced CMOS FinFET Process

Abstract

A new antifuse one-time programmable (OTP) memory array by the 16-nm FinFET high- $\pmb \kappa $ metal gate process is proposed and demonstrated. The OTP cells are programed by gate dielectric breakdown. The asymmetric ${I}$ – ${V}$ characteristics can be achieved by controlling the current compliance level during its programing operation. Based on the diode-like postbreakdown ${I}$ – ${V}$ characteristics, a high-density cross-point array without cell selectors is demonstrated, by the advanced FinFET CMOS technology.