Abstract
The effects of Ga incorporation on goethite were investigated by using X-ray diffractometry (XRD), particle-induced X-ray emission (PIXE), susceptibility measurements and Mössbauer spectroscopy (MS). Samples GaxFe1−xOOH were prepared with x=0.00, 0.01, 0.03, 0.05, 0.10, 0.35 and 0.70. All the samples are single-phase and an accurate observation of the structure refinement procedure makes clear the sample-dependent structural behaviour. A model is proposed in which the main effect of Ga incorporation is to reduce the crystallite dimensions.
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