Abstract
The antiferromagnetic instability of heavy-fermion alloys with conduction band impurities is examined in the single-site coherent-potential approximation with the strong correlation treated by the slave-boson technique of Kotliar and Ruckenstein. The variation of the paramagnetic-antiferromagnetic phase boundary with the impurity concentration is studied in the case of isoelectronic doping. Our results show that the isoelectronic doping favours the formation of antiferromagnetism if the impurities increase the cell volume, thus suppressing the c-f mixing, which is in agreement with experimental observations in Ce(Cu1-xAgx)6 and Ce(Cu1-xAux)6. The obtained phase diagram can also be used to explain the effect of nonisoelectronic substitutions of Al for Cu in CeCu6.
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