Abstract
Structural and electrical transport properties were investigated for Heusler-type alloy Ru2 MnGe thin films. Ru2 MnGe films on MgO substrate were subjected to an in-plane compressive strain due to their small lattice mismatch (-0.7%), and exhibited enhanced antiferromagnetic transition temperature (TN) up to 353 K, which is much higher than that of the bulk material (TN = 316 K). In contrast, the films on MgAl 2O 4 were almost in a relaxed-strain state, and showed TN close to the bulk value (304 K). It was also found that the TN of Ru2MnGe thin films on MgO exhibited oscillating behavior depending on c/a ratio. We argued that the next-nearest neighbor magnetic interactions (J2) of Mn-Mn atoms has oscillated depending on the degree of strain in Ru2MnGe, which contribute to the oscillating behavior of TN against c/a.
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