Abstract
Antiferromagnetic (AF) coupling has been observed in sputtered Fe/Si multilayers at room temperature, with thin spacers (<20 Å) which were claimed to be FeSi. To study the magnetic coupling in this system we extend the RKKY interaction approach to a temperature-dependent narrow gap semiconductor. The strong AF coupling at room temperature and weakly ferromagnetic (F) coupling at low temperatures observed in Fe/Si can be explained from this model.
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