Antiferromagnetic chromium thin films as piezoresistive sensor materials

Abstract

Sputter-deposited thin films of pure chromium and of chromium with small amounts of nitrogen are characterized regarding their electrical resistivity and strain dependence, i.e., piezoresistivity. They show a temperature dependent piezoresistive effect with gauge factors ranging approximately from 10 to 20. Related to this effect, they exhibit signs of a paramagnetic–antiferromagnetic transition at temperatures of 420 K and higher. For characterization, resistivity is measured at different strain levels: in a bending setup with a fixed radius and in a four-point bending system with reference strain gauges. Several parameter series of the sputter deposition of pure Cr films show that the higher gauge factor is correlated to a higher temperature coefficient of resistivity (TCR). The addition of nitrogen extends the range of TCR toward negative values, with gauge factors still in the same range as pure Cr. A Cr–N strain gauge is characterized and shows a linear, low-hysteresis strain–resistivity effect as well as a relatively large transverse sensitivity. Resistivity and gauge factor of one Cr and one Cr–N sample are measured from room temperature up to 600 K. These films have a resistivity anomaly indicating an antiferromagnetic ordering temperature TN that is much higher than in bulk Cr. The gauge factor has a maximum near TN and falls to small values at higher temperatures. The results indicate that the piezoresistivity of Cr and Cr-rich films is coupled to their spin-density wave (SDW) antiferromagnetism. Since the SDW state is known to be tunable through alloying, internal stress, and crystallinity, it appears that piezoresistivity can be influenced by these parameters as well.