Abstract
Dependences of anticrossing gaps between pairs of subbands inAlxGa1−xN/GaN double quantum wells (DQWs) onthe width and the Al composition of the central barrier of the DQWs andon the well width of the DQWs have been investigated by solving theSchrödinger and Poisson equations self-consistently. It is found thatthe anticrossing gaps are not influenced by the polarization-inducedelectric field in the DQWs. The anticrossing gaps decrease withincreasing the width and the Al composition of the central barrier ofthe DQWs, as well as with the increasing well width of the DQWs.According to the results of the calculation, the anticrossing gaps canreach 150 meV in AlxGa1−xN/GaN DQWs. There issignificant coupling between the two wells of the DQWs when the widthof the central barrier of the DQWs is narrower than 2 nm.
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