Abstract
The first observation of parametric down-conversion in silicon is reported. Conversion from 1542.3nm to 1328.8nm is achieved using a CW pump laser at 1427 nm. The conversion occurs via Coherent Anti-Stokes Raman Scattering (CARS) in which two pump photons and one Stokes photon couple through a zone-center optical phonon to an anti-Stokes photon. The maximum measured Stokes/anti-Stokes power conversion efficiency is 1x10-5. The value depends on the effective pump power, the Stimulated Raman Scattering (SRS) coefficient of bulk silicon, and waveguide dispersion. It is shown that the power conversion efficiency is a strong function of phase mismatch inside the waveguide.
Highlights
The study of nonlinear optical materials has been driven in recent years by the need of optically active devices that can be monolithically integrated into optoelectronic circuits
The first is the “electronic”, non-resonant component, χ(3)NR, which is nearly instantaneous in response and broadband, and which accounts for such effects as self-phase modulation (SPM) and Four Wave Mixing (FWM)
The blue diamonds correspond to counter-propagating pump and Stokes signal in the waveguide
Summary
The study of nonlinear optical materials has been driven in recent years by the need of optically active devices that can be monolithically integrated into optoelectronic circuits. Coherent Anti-Stokes Raman Scattering (CARS), Parametric Wavelength Conversion (PWC), and Optical Parametric Amplification (OPA) are well-known nonlinear optical processes [2, 3]. The present situation involves interaction of three fields: the pump, the Stokes, and the anti-Stokes (a-Stokes) fields, at wavelengths (frequencies) λp(ωp), λS(ωS), λaS(ωaS ), respectively These fields interact inside a SOI waveguide via the third-rank nonlinear tensor of silicon (χ(3)). The waveguides used in our previous measurements and in the current setup were fabricated parallel to [1 1 0] direction on a silicon [001] surface, due to the favorable cleaving property of silicon in this orientation This geometry lends itself to a coordinate system (x, y, z) rotated with respect to the crystallographic axes by 45o around the [001] axis. The tensorial nature and symmetry properties of χ(3)R(Ω) in silicon are inherited from the spontaneous Raman tensor, and is carried in the three Raman tensor components, Ri, which in the present coordinate system are written as [12], t
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