Abstract
Low temperature (10K) strong anti-Stokes photoluminescence (ASPL) of ZnO microcrystal excited by low power cw 532nm laser is reported here. Energy upconversion of 1.1eV is obtained in our experiment with no conventional nonlinear effect. Through the study of the normal photoluminescence and temperature dependence of ASPL we conclude that the green band luminescence in ZnO is related to deep donor to valance band transition. Using the two-step two-photon absorption model, we provide a plausible mechanism leading to the ASPL phenomenon in our experiment.
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