Abstract
A strong photoluminescence (PL) up-conversion signal arising from single InAs/GaAs self-assembled quantum dots (QDs) has been observed using micro-PL spectroscopy with continuous-wave excitation. Excitation spectroscopy of the up-converted signal allows one to assign the background gradually increasing up to the wetting layer (WL) absorption band edge usually observed in PL excitation (PLE) spectroscopy to a band tail related to the WL quantum well. Acoustic phonon-mediated spectral broadening of excited states of the QDs has also been studied using micro-PLE spectroscopy. A strong correlation has been found between the background level and the phonon-induced dephasing. These experimental findings give an indication of the influence of the environment on quantum dot properties and highlight some of the limitations of the artificial atom model for a semiconductor quantum dot.
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