Abstract
The surface of poly(methyl methacrylate) (PMMA) was treated by plasma with an end-Hall ion source in vacuum in order to enhance its anti-reflectivity. The cone-shaped bumps induced by the plasma etching have shown an antireflective effect. Moreover, PMMA has poor thermal durability due to its low melting point; therefore, the etched PMMA was further coated by a 5 nm thick SiO2 film after 900 and 1300 s plasma etching. Samples after SiO2 coating were thermally annealed at temperature of 70°C for 1 h. Experiments show that transmittance was increased after 5 nm thick SiO2 coating. The of transmittance of PMMA after both sides treated by 900 s plasma etching and 5 nm SiO2 coating was not changed after thermal annealing. However, without SiO2 coating the transmission was reduced 1% after annealing. Atomic force microscope (AFM) demonstrated that the nano-structures of cone-shaped bumps were formed on the PMMA after plasma etching and a smoother nano-structured pattern preserved the transmittance of the PMMA after both sides treated by 900 s plasma etching and 5 nm SiO2 coating. Three dimensional photonic crystal formed by uniformly distributed cone-shaped bumps was assumed to result in the reduction of the anti-reflectivity of treated PMMA.
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