Abstract
We propose anti-phase direct bonding and report on the first demonstration of its application to device fabrication. Cross-sectional observation by high-resolution transmission electron microscope showed that InP and GaAs wafers bonded at the atomic level and the misfit dislocations were localized at the bonding interface. Then InP-based 1.55 μm wavelength lasers were fabricated on GaAs. The performance of the lasers was approximately equal to that of the lasers formed by in-phase direct bonding. Moreover, stable operation was possible for more than 1000 h at 50 °C.
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