Abstract
Tunnel current measurements between strongly disordered two-dimensional electron systems in a perpendicular magnetic field are presented. Two-dimensional electron accumulation layers are formed by Si delta doping of GaAs on either sides of an AlGaAs tunnel barrier. Strong interaction between Landau levels of the two-dimensional subbands in each accumulation layers are observed as an anti-crossing of the related peak positions in the tunnel current versus voltage curves as a function of magnetic field. The splitting of the interacting Landau levels is about 10meV, which cannot be explained by non-parabolicity of the conduction band in GaAs. Possible reasons for the observed interaction are discussed.
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