Abstract
Cavities were created by MeV He implantation in silicon through a 1.5 μm Al foil. After a 800 °C-annealing, unexpected growth mechanism was found: a non-uniform layer of cavities with a distribution where bigger cavities are surrounded by smaller ones. Neither Oswald ripening nor migration-coalescence mechanisms can be applied to describe the growth of these cavities. The role of dislocations seem to be important in that distribution. Indeed some cavities seem to be trapped by dislocations. However the motion of the helium does not appear to be the origin of that anormal growth mechanism.
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