Abstract
Uphill diffusion of boron implanted with 0.5 keV in silicon was investigated under nonamorphizing implant conditions. Postimplantation annealing at temperatures above 400°C induces the uphill diffusion of boron, which can be observed in an initial stage of annealing. The uphill diffusion is significantly suppressed by additional Si implantation into the boron implant region, suggesting that the uphill diffusion is mediated by the excess free self-interstitials during the annealing. Also, the uphill diffusion causes severe dose loss of implanted boron to the Si/SiO2 interface.
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