Abstract
Threshold voltage ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) instability and surface passivation effect of transparent indium-zinc-oxide electric-double-layer thin-film transistors (TFTs) are investigated. Unpassivated devices show a large negative threshold voltage shift of 0.68 V in the beginning of light-illuminated negative gate bias stress. Under longer time stress, anomalous positive <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> shifts are observed for both unpassivated and passivated TFTs, which is due to the mobile ions drifting in the SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based solid-electrolyte gate dielectric. After surface passivation, the devices show neglectable negative <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> shifts of less than 0.1 V due to the protection of channel against the photodesorption of adsorbed oxygen ions.
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