Abstract
The concentration dependence of the entropy of doped Mott-Hubbard insulators has been considered within the t-J model. It has been shown that a change in the type and statistics of charge carriers as compared to the Fermi gas leads to a radical change in the entropy s, in particular, to the giant growth of the entropy upon doping. The quantity ∂s/∂x ≈ kB is approximately consistent with the experimental data for HTSC cuprates in the pseudogap phase.
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