Abstract

Thermally induced threshold wavelength shifts of 50 nm have been observed in short cavity length diode lasers fabricated from thin quantum well AlGaAs. Analysis suggests that the high-energy radiation is generated by transitions between the n=2 level in the conduction band and the n=2 heavy hole level in the valence band. The threshold characteristic temperature (T0) of the laser material is found to be a strong function of cavity length.

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