Abstract
Electrical characteristics of Metal/β-Ga2O3/n-Si structures with pure β-Ga2O3, Ti – and Cr – doped β-Ga2O3 films have been investigated. For all samples, regardless of the dopant type, a current decrease with the temperature increase is observed both at forward and reverse biases. The anomalous temperature dependencies are explained by the presence of traps located in a certain energy range near the bottom of the conduction band Ec. When the positive potential is applied to the electrode on the side of gallium oxide, the current-voltage characteristics are described as space charge limited current in the presence of energy distributed traps. In the case of a negative potential applied to the electrode on the side of gallium oxide, the reverse currents are due to the hopping conduction to the nearest neighboring state unoccupied by the electron.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
