Abstract
Enhanced Hall mobility has been measured in Si doping superlattices with pipi or nini doping profiles grown by molecular beam epitaxy. Although the carrier concentration is large, in the range of 10 18cm −3, the mobility of holes in the pipi doping superlattice has the temperature dependence such as that expressed in the T −2.2 law which is characteristic of high purity bulk crystals. The hole mobility is about twice that of high purity crystals, rising up to 40,000 cm 2/V.s at about 30 K. In the case that p-type impurity concentration is comparable to n-type impurity concentration, no mobility enhancement is observed and the mobility is anomalously depressed. The mechanisms for drastical change in the mobility of doping superlattices have not yet been clarified.
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